Method for designing cell array layout of non-volatile memory de

Details Method for designing cell array layout of non-volatile memory de Method for designing cell array layout of non-volatile memory de

1996-03-13

2000-05-02

Lintz, Paul R.

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

716 19, 438256, 438587, 257315, 257316, G06F 1700

Patent

active

06056783&

ABSTRACT:
There is provided a method for designing a cell array layout of a non-volatile memory device which facilitates a contact hole process and contributes to the reduction of chip size, by modifying a layout of active contact holes. In the method, the distance between active regions are uniformly maintained in all cells by forming a second active line over a active contact region. Therefore, variations, caused by microloading effects when patterning active regions, of the width of active regions in some cell strings can be prevented. Operational failure of a cell caused by variations in the coupling ratio can be prevented, as well.

REFERENCES:
patent: 5183781 (1993-02-01), Nakan
patent: 5317534 (1994-05-01), Choi et al.
patent: 5326999 (1994-07-01), Kim et al.
patent: 5379233 (1995-01-01), Tripaohi et al.
patent: 5392237 (1995-02-01), Iida
patent: 5426608 (1995-06-01), Higashitani
patent: 5465249 (1995-11-01), Cooper, Jr. et al.
patent: 5497345 (1996-03-01), Cappelletti
patent: 5557569 (1996-09-01), Smayling et al.
patent: 5640031 (1997-06-01), Keshtbod
patent: 5656527 (1997-08-01), Choi et al.

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