Wet process for developing styrene polymer resists for submicron

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

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430272, 430327, 430270, 430954, 430311, 430330, 430331, 427 531, 427 541, 4273722, 427387, G03C 516, G03C 174

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045872031

ABSTRACT:
The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.
A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.
The resist image is then developed using a developer solvent to remove resist polymer which was not irradiated, and the developer solvent is followed by a rinse solvent which, in one aspect, substantially eliminates any snaky lines or edges on the developed resist image, or in another aspect, by utilizing multiple rinses to accomplish the same and to also remove substantially all of the residual developer solvent trapped within the developed resist image, thus reducing swelling and returning the initial resist to about the same dimensions as the image prior to development.

REFERENCES:
patent: 2991204 (1961-07-01), Astle
patent: 3520683 (1970-07-01), Kerwin
Kaas and Kardos, "The Interaction of Alkoxy Silane Coupling Agents with Silica Surfaces", Polymer Engineering and Science, Jan. 1971, vol. 11, No. 1, pp. 11-18.
J. N. Helbert and H. G. Hughes, "Organosilanes as Process Compatible Adhesion Promoters for Resist Materials", Adhesion Aspects Polym. Coat. from a symposium meeting in 1981, edited by Kashmiri Lai Mittal, Plenum, New York, N.Y., pp. 499-508.

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