Method of making a trench mosfet with heavily doped delta layer

Details Method of making a trench mosfet with heavily doped delta layer Method of making a trench mosfet with heavily doped delta layer

1995-06-06

1997-11-18

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21265, H01L 2144, H01L 2148

Patent

active

056887256

ABSTRACT:
In a vertical trench MOSFET, a layer of increased dopant concentration is formed in a lightly-doped or "drift" region which separates the body region from the drain region of the MOSFET. The layer of increased dopant concentration denominated a "delta" layer, operates to spread out the current as it emerges from the channel of the MOSFET and thereby reduces the resistance of the MOSFET when it is turned on.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 5341011 (1994-08-01), Hshieh et al.
patent: 5424231 (1995-06-01), Yang
patent: 5532179 (1996-07-01), Chang et al.
patent: 5558313 (1996-09-01), Hshieh et al.

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