Method of dry etching

Details Method of dry etching Method of dry etching

1988-07-25

1991-01-22

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156656, 156657, 156662, 156665, C23F 102, B44C 122

Patent

active

049868772

ABSTRACT:
A first etching for large side etching is conducted while maintaining the temperature of an article to be etched at a first temperature, and a second etching for small side etching is then conducted while maintaining the article to be etched at a second temperature lower than the first temperature. This enables the formation of various patterns in which the upper part of the sidewall is inclined at an angle smaller than that of the lower part of the sidewall.

REFERENCES:
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4618398 (1986-10-01), Nawata et al.
patent: 4726879 (1988-02-01), Bondur et al.
patent: 4798650 (1989-01-01), Nakamura et al.
Chen et al., "Tapered Via Hole", IBM Tech. Discl. Bulletin, vol. 26, No. 12, May 1984.
Patent Abstracts of Japan, vol. 6, No. 67 (E-104)[945], Apr. 28, 1982, relating to JP-A-57 7936.
Solid State Technology, vol. 23, No. 11, pp. 85-91, Nov. 1980, Schwartz et al.: "Reactive Ion Etching in Chlorinated Plasmas".

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