Method of fabricating nonvolatile semiconductor memory devices w

Details Method of fabricating nonvolatile semiconductor memory devices w Method of fabricating nonvolatile semiconductor memory devices w

1997-05-30

1999-09-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, H01L 218247

Patent

active

059536110

ABSTRACT:
A method of producing a nonvolatile semiconductor memory devices in which a source line is formed in a self-alignment fashion, wherein the nonvolatile semiconductor tunnel oxide film, a control gate electrode formed on the floating gate electrode, and a select gate electrode formed on the control gate electrode, and a part of the select gate electrode is disposed on the channel via a gate dielectric layer. The method includes the steps of: forming a side wall film, which will be used in self-alignment processing, on a side of the multilayer structure consisting of the floating gate electrode and the control gate electrode; implanting impurity ions into a region intended to become a source line in a self-alignment fashion using the side wall film as a mask thereby forming the source line; and forming the select gate electrode while keeping at least the portion of the film in the space above the drain line remaining without being removed.

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