Method of making deep sub-micron meter MOSFET with a high permit

Details Method of making deep sub-micron meter MOSFET with a high permit Method of making deep sub-micron meter MOSFET with a high permit

1997-10-20

1998-11-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438591, 438770, H01L 21336

Patent

active

058343539

ABSTRACT:
The method of the present invention includes forming a silicon oxynitride layer on a substrate. Then, a dielectric layer with high permitivity is deposited by chemical vapor deposition on the silicon oxynitride layer. Subsequently, a rapid thermal process (RTP) anneal is performed in N.sub.2 O or NO ambient to reduce the dielectric leakage. A multiple conductive layer consisting of TiN/Ti/TiN is then formed on the dielectric layer. Then, the multiple conductive layer, the dielectric layer, and the silicon oxynitride layer are patterned to form gate structure. A plasma immersion is performed to form ultra shallow extended source and drain junctions. Side wall spacers are formed on the side walls of the gate structure. Next, an ion implantation is carried out to dope ions into the substrate. Next, a rapid thermal process (RTP) anneal is performed to form shallow junctions of the source and the drain.

REFERENCES:
patent: 5393783 (1995-02-01), Mathews et al.
patent: 5464783 (1995-11-01), Kim et al.
patent: 5712208 (1998-01-01), Tseng et al.
Hisayo Sasaki Momose et al. "High-Frequency AC Characteristics of 1.5 nm Gate Oxide Mosfets" IEEE. 1996. pp. 105-108.
Chuan Lin et al. "Leakage Current, Reliability Characteristics, and Boron Penetration of Ultra-Thin (32-36.ANG.) 0.sub.2 -Oxides and N.sub.2 0/N0 Oxynitrides" IEEE, 1996, pp. 331-334.
S. C. Sun et al. "A Novel Approach for Leakage Current Reduction of LPCVD Ta.sub.2 0.sub.5 and Ti0.sub.2 Films by Rapid Thermal N.sub.2 0 Annealing" IEEE, 1994, pp. 333-336.
Ruth Dejule "Meeting the Ultra-Shallow Junction Challenge" Semiconductor International, Apr. 1997.

Affiliated with

Also associated with

Rating

Method of making deep sub-micron meter MOSFET with a high permit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making deep sub-micron meter MOSFET with a high permit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making deep sub-micron meter MOSFET with a high permit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516209