Method of manufacturing self-aligned silicide

Details Method of manufacturing self-aligned silicide Method of manufacturing self-aligned silicide

1998-03-25

1999-01-12

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, 438466, 438520, H01L 21265

Patent

active

058588493

ABSTRACT:
The present invention disclose a salicide process with a self-preamorphization step to reduce the sheet resistance of the source/drain region. The salicide process, comprising the steps of performing a pre-amorphization step on the surface of the silicon and simultaneously forming a metal layer, further contains the substeps of applying a back bias to the bottom of the substrate, using ion metal plasma to transform the surface of the substrate into amorphous silicon, forming a metal layer on the surface of the substrate and then using a thermal process having two stages to transform the metal into the salicide.

REFERENCES:
patent: 4764394 (1988-08-01), Conrad
patent: 4908334 (1990-03-01), Zuhr et al.
patent: 5122479 (1992-06-01), Audet et al.
patent: 5508227 (1996-04-01), Chan et al.
patent: 5665646 (1997-09-01), Kitano

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