Method of making a blanket N-well structure for SRAM data stabil

Details Method of making a blanket N-well structure for SRAM data stabil Method of making a blanket N-well structure for SRAM data stabil

1997-01-10

1999-01-12

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438227, 438228, 438238, 438527, H01L 218238

Patent

active

058588264

ABSTRACT:
SRAMs conventionally formed on N-type substrates are instead formed on P-type substrates which have had the surface layer of the substrate converted to a blanket N-type well region. Preferably, the blanket N-type well region is formed by ion implantation of phosphorus ions to a dosage of between 5.times.10.sup.12 to 2.times.10.sup.13 /cm.sup.2 at an energy of 200-1000 KeV. Use of a P-type substrate having a blanket N-well region formed by ion implantation are less expensive than the N-type substrates conventionally used, and make the SRAM processing techniques compatible with the P-type substrates conventionally used in microprocessors and other logic devices.

REFERENCES:
patent: 5393677 (1995-02-01), Lien et al.
patent: 5494843 (1996-02-01), Huang
patent: 5501993 (1996-03-01), Borland
patent: 5573963 (1996-11-01), Sung
patent: 5698458 (1997-12-01), Hsue et al.

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