Semiconductor integrated-circuit device having n-type and p-type

Details Semiconductor integrated-circuit device having n-type and p-type Semiconductor integrated-circuit device having n-type and p-type

1998-03-23

2000-07-04

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257691, H01L 2701, H01L 2712, H01L 310392

Patent

active

060842709

ABSTRACT:
With a simple structure without an increase in area, for minimizing fluctuations of potentials at a power line and ground line occurring during operation of a semiconductor integrated circuit having an SOI structure and improving heat dissipation efficiency and operational reliability, an SOI type semiconductor integrated-circuit device has an n-type semiconductor conductive region (39) and p-type semiconductor conductive region (37) formed under an embedded insulating layer (13) for insulating transistors (15p, 15n). A global power line (17) extending from the transistor (15p) is linked directly to the n-type conductive region (39) with no switch or the like between them. Likewise, a global ground line (19) extending from the transistor (15n) is linked directly to the p-type conductive region (37).

REFERENCES:
patent: 5359219 (1994-10-01), Hwang
patent: 5892260 (1999-04-01), Okumura et al.

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