Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1997-02-19
2000-01-11
Niebling, John F.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
438784, 438788, H01L 2131, H01L 21469
Patent
active
060135840
ABSTRACT:
An apparatus and methods for forming a dielectric layer, such as PSG, that exhibits low moisture content, good gap fill capability, good gettering capability, and compatibility with planarization techniques. The PSG film deposited using the apparatus and methods of the present invention are particularly suitable for use as a PMD layer. According to one embodiment, the present invention provides a process for depositing a film on a substrate disposed on a pedestal in a processing chamber. The process includes introducing a process gas into said processing chamber, where the process gas includes SiH.sub.4, PH.sub.3, O.sub.2, and argon. The process also includes controlling the temperature of the pedestal to between about 400-650.degree. C. during a first time period, maintaining a pressure ranging between about 1-10 millitorr in the processing chamber during the first time period. In addition, the process includes applying power to an inductively coupled coil to form a high density plasma from the process gas in the processing chamber during the first time period, and biasing the plasma toward the substrate to promote a sputtering effect of the plasma and deposit the phosphosilicate glass (PSG) film over the substrate during the first time period. In related embodiments, the process may include the further step of annealing the film or of chemical mechanical polishing the film.
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Applied Materials Inc.
Jones Josetta I.
Niebling John F.
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