Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-09-05
1998-06-02
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438592, 438656, H01L 21336
Patent
active
057599009
ABSTRACT:
A method of manufacturing a field effect transistor (FET) includes the steps of: sequentially forming a conductive layer and a semiconductor layer on a first conductivity type substrate; patterning the semiconductor layer to form a gate electrode; implanting second conductivity type impurity ions at a low concentration into a surface of the substrate using the gate electrode as a mask, to thereby form low-concentration impurity regions in the substrate; forming and patterning an insulating layer on an overall surface of the substrate to form insulating side-wall spacers on side-walls of the gate electrode; and implanting second conductivity type FET impurity ions at a high concentration into a surface of the substrate using the gate electrode and insulating side-wall spacers as an etch-mask, to thereby form high-concentration impurity regions in the substrate.
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Bowers Jr. Charles L.
LG Semicon Co. Ltd.
Thomas Toniae M.
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