Method of making an asymmetrical transistor with lightly and hea

Details Method of making an asymmetrical transistor with lightly and hea Method of making an asymmetrical transistor with lightly and hea

1996-09-03

1998-06-02

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438307, H01L 21336

Patent

active

057598975

ABSTRACT:
An asymmetrical IGFET including a lightly and heavily doped drain regions and an ultra-heavily doped source region is disclosed. Preferably, the lightly doped drain region and ultra-heavily doped source region provide channel junctions. A method of making the IGFET includes providing a semiconductor substrate, forming a gate with first and second opposing sidewalls over the substrate, applying a first ion implantation to implant lightly doped source and drain regions into the substrate, applying a second ion implantation to convert substantially all of the lightly doped source region into a heavily doped source region without doping the lightly doped drain region, forming a drain-side spacer adjacent to the second sidewall, and applying a third ion implantation to convert the heavily doped source region into an ultra-heavily doped source region and to convert a portion of the lightly doped drain region outside the drain-side spacer into a heavily doped drain region without doping a portion of the lightly doped drain region beneath the drain-side spacer. Advantageously, the IGFET has low source-drain series resistance and reduces hot carrier effects.

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U.S. Patent Application, Serial No. 08/682,493, filed Jul. 17, 1996, entitled "Method For Fabrication Of A Non-Symmetrical Transistor", by Mark I. Gardner, Michael P. Duane and Derick J. Wristers, pending.

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