Gate oxidation technique for deep sub quarter micron transistors

Details Gate oxidation technique for deep sub quarter micron transistors Gate oxidation technique for deep sub quarter micron transistors

1997-05-23

1998-12-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438773, 438787, 438905, 438906, 427534, 427560, H01L 21306

Patent

active

058496432

ABSTRACT:
A method of growing an oxide film in which the upper surface of a semiconductor substrate is cleaned and the semiconductor substrate is dipped into an acidic solution to remove any native oxide from the upper surface. The substrate is then directly transferred from the acidic solution to an oxidation chamber. The oxidation chamber initially contains an inert ambient maintained at a temperature of less than approximately 500.degree. C. The transfer is accomplished without substantially exposing the substrate to oxygen thereby preventing the formation of a native oxide film on the upper surface of the substrate. Thereafter, a fluorine terminated upper surface is formed on the semiconductor substrate. The temperature within the chamber is then ramped from the first temperature to a second or oxidizing temperature if approximately 700.degree. C. to 850.degree. C. The presence of the fluorine terminated upper surface substantially prevents oxidation of the semiconductor substrate during the temperature ramp. A silicon-oxide film such as silicon dioxide is then grown on the fluorine terminated upper surface of the semiconductor substrate by introducing an oxidizing ambient into the chamber. After the formation or growth of the silicon-oxide, polysilicon is deposited on the silicon oxide film.

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