Method of producing rough polysilicon by the use of pulsed plasm

Details Method of producing rough polysilicon by the use of pulsed plasm Method of producing rough polysilicon by the use of pulsed plasm

1996-12-09

1998-12-15

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

H01L 2120

Patent

active

058496289

ABSTRACT:
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.

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