Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-10
1999-11-09
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, H01L 21249
Patent
active
059813458
ABSTRACT:
The present invention relates to a metal silicon field effect transistor (MOSFET), and more particularly to a MOSFET, using a Si or SiGe channel to effectively adjust threshold voltage. The transistor according to the present invention can solve the problems, such as the punch-through caused by the short distance between the source region and the drain region, the decrease of the breakdown voltage between the source region and the drain region and the leakage current flowing into the bulk region beneath the channel due to the drain-induced barrier lowering. Furthermore, because the source region and the drain region are isolated from the semiconductor substrate by the lower insulation layer, the removal of the parasite junction capacitor speed up the transistor.
REFERENCES:
patent: 5360749 (1994-11-01), Anjum et al.
patent: 5760442 (1998-06-01), Shigyo et al.
Cho Deok-Ho
Han Tae-Hyeon
Lee Soo-Min
Ryum Byung-Ryul
Chaudhuri Olik
Coleman William David
Electronics and Telecommunications Research Institute
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