Process optimization in gas phase dry etching

Details Process optimization in gas phase dry etching Process optimization in gas phase dry etching

1997-10-02

1999-11-09

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 74, 438 9, 438 14, 438689, 438706, 156345, H01L 2166, G01R 3126

Patent

active

059807660

ABSTRACT:
A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.

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