Method for removal of photoresist over metal which also removes

Details Method for removal of photoresist over metal which also removes Method for removal of photoresist over metal which also removes

1991-11-21

1993-06-22

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156664, 156665, 156668, H01L 2100

Patent

active

052214249

ABSTRACT:
A process is described for removing from an integrated circuit structure photoresist remaining after a metal etch which also removes or inactivates a sufficient amount of any remaining chlorine residues remaining from the previous metal etch to inhibit corrosion of the remaining metal for at least 24 hours. The process includes a first stripping step associated with a plasma, using either O.sub.2 gas and one or more fluorocarbon gases, or O.sub.2 gas and N.sub.2 gas; followed by a subsequent step using a combination of H.sub.2 O.sub.2 /H.sub.2 O vapors, O.sub.2 gas, and optionally N.sub.2 gas associated with a plasma. Preferably, the plasma is generated in a microwave plasma generator located upstream of the stripping chamber, and the stripping gases pass through this generator so that reactive species produced from the gases in the plasma enter the stripping chamber.

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