Silicide process for manufacturing a mask ROM

Details Silicide process for manufacturing a mask ROM Silicide process for manufacturing a mask ROM

1997-05-27

1998-12-29

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438277, 438279, 438276, H01L 218234

Patent

active

058541098

ABSTRACT:
A self-aligned silicide process for the formation of a mask ROM includes forming a self-aligned silicide layer over the bit lines and the word lines to lower the resistance of the bit lines and word lines in the mask ROM.

REFERENCES:
patent: 5362662 (1994-11-01), Ando et al.
patent: 5384478 (1995-01-01), Hong
patent: 5504025 (1996-04-01), Fong-Chun et al.
patent: 5648289 (1997-07-01), Park
patent: 5688661 (1997-11-01), Choi

Affiliated with

Also associated with

Rating

Silicide process for manufacturing a mask ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicide process for manufacturing a mask ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicide process for manufacturing a mask ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1424031