Method for forming a gate-side air-gap structure in a salicide p

Details Method for forming a gate-side air-gap structure in a salicide p Method for forming a gate-side air-gap structure in a salicide p

1997-01-21

1998-06-23

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438586, 438664, 438683, H01L 21283, H01L 21336

Patent

active

057705070

ABSTRACT:
A method for forming a gate-side air-gap structure in a salicide process for preventing bridging, which starts on a semiconductor wafer with active region defined completely by field oxide, includes the steps: depositing sequentially a thin oxide layer, a polysilicon layer, and a first layer over the wafer; patterning the first layer, the polysilicon layer, and the thin oxide layer to form a stack gate which consists of first layer and a gate, wherein the gate consists of the polysilicon layer and the thin oxide layer; forming lightly-doped drains beside the stack gate in the active region; forming a second layer on the sidewall of the stack gate; forming a spacer on the sidewall of the second layer; forming source and drain regions; removing the first layer and the second layer to reveal the gate, wherein air gaps exist between the gate and the spacer; depositing a titanium layer over the wafer; heating the titanium layer to form TiSi.sub.2 layers on the gate, the drain region, and the source region; removing the titanium layer remaining intact over the air gaps, the spacer, and the field oxide; and heating the TiSi.sub.2 layer over the wafer.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 4735680 (1988-04-01), Yen
patent: 4885259 (1989-12-01), Osinski et al.
patent: 5330925 (1994-07-01), Lee et al.

Affiliated with

Also associated with

Rating

Method for forming a gate-side air-gap structure in a salicide p does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a gate-side air-gap structure in a salicide p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a gate-side air-gap structure in a salicide p will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1394318