Method of making self-aligned cylindrical capacitor structure of

Details Method of making self-aligned cylindrical capacitor structure of Method of making self-aligned cylindrical capacitor structure of

1996-11-18

1998-03-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, H01L 218242

Patent

active

057260869

ABSTRACT:
The present invention discloses a method of fabricating self-aligned cylindrical capacitor in stack Dynamic Random Access Memory (Stack DRAM) cells. The polysilicon stud is filled in the contact window of the source region of a metal-oxide-semiconductor field effect transistor (MOSFET). Then the polysilicon spacers are formed on the sidewalls of the first polysilicon stud. The cylindrical capacitor storage node of the DRAM capacitor of the present invention has much greater surface area so as to increase the capacitance value of the DRAM capacitor, that can achieve high packing density of the integrated circuit devices. Furthermore, this new process only needs one lithography photomask to open contact window compared with the conventional process which needs two lithography photomasks, that further reduces the production cost.

REFERENCES:
patent: 5185282 (1993-02-01), Lee et al.
patent: 5273925 (1993-12-01), Yamanaka
patent: 5364809 (1994-11-01), Kwon et al.
patent: 5468670 (1995-11-01), Ryou

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