Method of making ESD protection circuit with three stages

Details Method of making ESD protection circuit with three stages Method of making ESD protection circuit with three stages

1995-07-26

1997-01-14

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 56, 437918, H01L 218234

Patent

active

055939112

ABSTRACT:
An MOS electrostatic discharge, ESD, protection circuit for protecting semiconductors from ESD damage is formed on a doped silicon substrate. The circuit includes three stages. The first stage includes a first MOSFET transistor and a grounded region formed in the substrate. The first MOS transistor has a source/drain circuit connected between the first node and ground, and has a control gate electrode connected to ground. The second stage includes a string of MOSFET transistors connected in a series string. The transistors in the string are in sufficient number to provide a circuit which will conduct at a high current level to protect the output circuit from overvoltage when the voltage exceeds a critical value. The third stage includes a third stage MOSFET device with a control gate connected to the second stage output and to the output of the circuit. The source and drain circuit of the third stage device are connected between the third node and the ground connection.

REFERENCES:
patent: 3407339 (1968-10-01), Booher
patent: 4527213 (1985-07-01), Ariizumi
patent: 4821096 (1989-04-01), Maloney
patent: 5158899 (1992-10-01), Yamagata
patent: 5246872 (1993-09-01), Mortensen
patent: 5547887 (1996-08-01), Brown et al.

Affiliated with

Also associated with

Rating

Method of making ESD protection circuit with three stages does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making ESD protection circuit with three stages, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making ESD protection circuit with three stages will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1387777