Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-08-26

1999-06-29

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438612, 438613, H01L 2144

Patent

active

059181443

ABSTRACT:
When BLM films as a barrier metal under solder balls are deposited to Al pad electrodes by a lift-off method utilizing a deformed resist pattern, a wafer is heated before sputter-forming of the BLM film, thereby eliminating a water content contained in a first layer polyimide film. In an rearrangement process, a wiring connecting the electrode pad and the solder ball is formed with the BLM film. Since degassing upon sputter forming of the BLM film is suppressed by the elimination of the water content, peeling of the BLM film on the first layer polyimide film is prevented. The wafer may also be heated simultaneously with the formation of the deformed resist pattern by Ar.sup.+ reverse sputtering (into overhang shape). Adhesion between the surface protection film and the BLM film upon rearrangement of the solder balls is thus improved in the flip chip bonding method.

REFERENCES:
patent: 4505029 (1985-03-01), Owyang et al.
patent: 5143865 (1992-09-01), Hideshima et al.
patent: 5310699 (1994-05-01), Chikawa et al.
patent: 5541135 (1996-07-01), Pfeifer et al.
patent: 5576629 (1996-11-01), Turner et al.
patent: 5672542 (1997-09-01), Schwiebert et al.

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