Semiconductor device having dual gate dielectric thickness along

Details Semiconductor device having dual gate dielectric thickness along Semiconductor device having dual gate dielectric thickness along

1997-12-18

1999-06-29

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438423, 438520, 438766, H01L 2131, H01L 213115

Patent

active

059181338

ABSTRACT:
Generally, the present invention relates to a semiconductor device having a dual thickness gate dielectric along the channel and a process of fabricating such a device. By providing a dual thickness gate dielectric, the gate dielectric can, for example, be optimized to the transistor and device performance can be enhanced.

REFERENCES:
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patent: 4651406 (1987-03-01), Shimizu et al.
patent: 5254489 (1993-10-01), Nakata
patent: 5316981 (1994-05-01), Gardner et al.
patent: 5330920 (1994-07-01), Soleimani et al.
patent: 5352618 (1994-10-01), Larsen et al.
patent: 5498577 (1996-03-01), Fulford, Jr. et al.
patent: 5501996 (1996-03-01), Yang et al.

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