Method of forming semiconductor memory device by selectively for

Details Method of forming semiconductor memory device by selectively for Method of forming semiconductor memory device by selectively for

1995-04-28

1997-05-13

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438261, H01L 218247

Patent

active

056292228

ABSTRACT:
A semiconductor memory device capable of being electrically written and erased comprising a floating gate, wherein, a silicon nitride film is incorporated between the drain region and the floating gate. Also claimed is a method for forming the same, which comprises forming a drain region on selected portions of a semiconductor substrate; forming a silicon nitride film or a silicon oxinitride film or a silicon carbide film or an aluminum oxide film selectively on the drain region; coating the substrate with a gate oxide film; and establishing a floating gate and thereafter a control gate.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 4665608 (1987-05-01), Okamoto et al.
patent: 4668970 (1987-05-01), Yatsuda et al.
patent: 4980307 (1990-12-01), Ito et al.
patent: 5025494 (1991-06-01), Gill et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5060034 (1991-10-01), Shimizu et al.
patent: 5065220 (1991-11-01), Paterson et al.
patent: 5067108 (1991-11-01), Jeng
patent: 5079606 (1992-01-01), Yamamura et al.
patent: 5194925 (1993-03-01), Ajika
patent: 5470771 (1995-11-01), Fujii

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