Method for self-stabilizing deposition of a stoichiometric compo

Details Method for self-stabilizing deposition of a stoichiometric compo Method for self-stabilizing deposition of a stoichiometric compo

1993-12-23

1996-02-20

Owens, Terry J.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429808, C23C 1434

Patent

active

054926068

ABSTRACT:
Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering using a cold plasma. A reactive gas is supplied to a target, the instantaneous power applied to the target is cyclically reduced and increased at a frequency sufficiently low that a reaction between the target material and the reactive gas takes place on the surface of the target, and the product of the reaction is then sputtered off the surface of the target and onto a substrate. The alternating decrease and increase of the instantaneous power applied to the target at low frequency provides for self-stabilizing deposition of the reaction product on the substrate.

REFERENCES:
patent: 4931169 (1990-06-01), Scherer et al.
patent: 5108569 (1992-04-01), Gilboa et al.
patent: 5180476 (1993-01-01), Ishibashi et al.
patent: 5292417 (1994-03-01), Kugler

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