Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Patent
1991-06-28
1993-10-19
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
257486, 257666, 257669, H01L 2978
Patent
active
052548694
ABSTRACT:
A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.
REFERENCES:
patent: 3290127 (1964-03-01), Kahng et al.
patent: 3599323 (1971-08-01), Saxena
patent: 3819432 (1974-06-01), Kniepkamp
Anantha, `Schottky,Barrier Diode . . . `, IBM Tech. Discl., vol. 14 No. 1, Jun. 1971, p. 239.
Alcorn, `Silicon Barrier Layer Metallurgy . . . `, IBM Tech. Discl., vol. 21 No. 6, Nov. 1978, pp. 2403-2405.
Sullivan, `Evaporated Metal Schottky Diode`, IBM Tech,. Discl., vol. 21, No. 7 Nov. 1978, p. 2816.
S. M. Sze, Physics of Semiconductor Devices, pp. 270-311 (2d ed. 1981).
Chang Jeng
Kwan Benjamin H.
Readdie John E.
James Andrew J.
Linear Technology Corporation
Meier Stephen D.
Morris Robert W.
Rowland Mark D.
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