Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-30
2000-07-25
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257412, 257286, 257382, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
060939516
ABSTRACT:
Disclosed is a low threshold asymmetric MOS device having a pocket region with a graded concentration profile. The pocket region includes a relatively high dopant atom concentration (of the same conductivity type as the bulk region) abutting either the device's source or its drain along the side of the source or drain that faces the device's channel region. The pocket region's graded concentration profile provides a lower dopant concentration near the substrate surface and an increasing dopant concentration below that surface. This provides a relatively low resistance conduction path through the pocket region, while allowing the device's threshold voltage to be somewhat higher at the pocket region. The asymmetric device can also include a counter dopant region located beneath its substrate surface. This forces current to flow in the substrate but just above the region of high counter dopant concentration, where the resistance is relatively low.
REFERENCES:
patent: 4062699 (1977-12-01), Armstrong
patent: 4173818 (1979-11-01), Bassous et al.
patent: 4208780 (1980-06-01), Richman
patent: 5031008 (1991-07-01), Yoshida
patent: 5429958 (1995-07-01), Matlock
patent: 5486480 (1996-01-01), Chen
patent: 5565377 (1996-10-01), Weiner et al.
patent: 5605855 (1997-02-01), Chang et al.
patent: 5650340 (1997-07-01), Burr et al.
patent: 5712501 (1998-01-01), Davies et al.
patent: 5744994 (1998-04-01), Williams
patent: 5753958 (1998-05-01), Burr et al.
patent: 5773863 (1998-06-01), Burr
McKay Philip J.
Nguyen Cuong Quang
Sun Microsystems Inc.
Tran Minh Loan
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