Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1999-04-14
2000-07-25
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438769, 4272551, 4272552, H01L 2131, H01L 21469
Patent
active
060936622
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
This invention relates to improvements in a method of operating a reactor for the generation of water that is intended for use in semiconductor manufacturing operations. More particularly, the present invention relates to the procedure for generating moisture for use in oxide film coating in a reaction chamber. This procedure may be referred to as a moisture oxidation method, a wet oxygen oxidation method, or a steam oxidation method.
BACKGROUND OF THE INVENTION
In the manufacture of semiconductor elements, the conventional so-called dry oxygen oxidation method of silicon oxide film coating by thermal oxidation has been largely replaced by the moisture oxidation process, which is also called the wet oxygen oxidation method and the steam oxidation method. The moisture oxidation method provides a silicon oxide film which is superior to that obtained by the dry oxygen oxidation method in such properties as insulation strength and masking effect.
Applicants had earlier developed a reactor for the generation of moisture by the aforesaid moisture oxidation method, as illustrated in FIG. 10. This was a supply source of super high-purity water for use in silicon oxide film coating. The reactor was disclosed in unexamined Japanese patent application No. 08-242246. Reactor 1 as shown in FIG. 10 comprises heat-resistant reactor structural components 2 and 3, a gas feed joint 4 and a moisture gas take-out joint 5 provided on reactor structural components 2 and 3, a reflector unit 9 on the inlet side provided inside first reactor structural component 2 opposite a feed gas passage 4a and a reflector unit 12 on the outlet side provided inside the second reactor structural component 3 opposite a moisture outlet passage 5a, a diffusion filter 10 provided between the two reactor structural components 2 and 3, and a platinum-coated catalyst layer 13 provided on an inside surface of the second reactor structural component 3.
The platinum-coated catalyst layer 13, which is formed on the inside wall surface of reactor structural component 3, is of a double layer construction, having a barrier coat 13a with a platinum coat 13b formed thereupon. The barrier coat 13a is formed of a nitride such as TiN, on which the platinum coat 13b is fixed by a vapor deposition technique or an ion coating technique.
In the arrangement depicted in FIG. 10, hydrogen and oxygen are fed into reactor 1 through gas feed passage 4a and diffused by a gas diffusion means 8 which comprises the inlet reflector unit 9, the filter 10, and the outlet reflector unit 12. The hydrogen and oxygen then come into contact with platinum-coated catalyst layer 13. Upon coming into contact with the platinum-coated catalyst layer 13, hydrogen and oxygen are enhanced in reactivity by catalytic action, being transformed into what is referred to as a radicalized state. Radicalized, hydrogen and oxygen react instantaneously with one another to produce water without undergoing combustion at a high temperature.
The reactor as shown in FIG. 10 is recognized as constituting a significant advance in semiconductor manufacturing technology. The reactor can be built in a substantially reduced size but can produce super high-purity water, or a mixture gas of super high-purity water and oxygen, at the rate of 1000 sccm or cc/minute in terms of the standard conditions with a high level of reactivity and response characteristics or responsiveness. To illustrate, three cases of moisture generation will be described using a reactor 1 having the construction shown in FIG. 10. The reactor 1 used was about 134 mm in outside diameter, about 70 mm in thickness, and about 490 cubic centimeters (cc) in inside volume.
The material gases of hydrogen and oxygen are fed at three different rates: Case A, hydrogen at 1000 sccm and oxygen at 1000 sccm; Case B, hydrogen at 1000 sccm and oxygen at 500 sccm; and Case C, hydrogen at 1500 sccm and oxygen at 500 sccm. The reactor turns out approximately 1000 sccm of a mixed gas of water and oxygen in Case A, approximately 1000 scam
REFERENCES:
patent: 5360768 (1994-11-01), Ohmi et al.
patent: 5656099 (1997-08-01), Ohmi
patent: 5840368 (1998-11-01), Ohmi
patent: 5888357 (1999-03-01), Mitsumori et al.
Ikeda Nobukazu
Kawada Koji
Minami Yukio
Morimoto Akihiro
Ohmi Tadahiro
Fujikin Incorporated
Ohmi Tadahiro
Picardat Kevin M.
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