Modified dual damascene process

Details Modified dual damascene process Modified dual damascene process

1998-12-07

2000-07-25

Dinh, Son T.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438640, 438700, H01L 214763, H01L 21311

Patent

active

060936320

ABSTRACT:
A process for creating a metal filled, dual damascene opening, in a composite insulator layer, has been developed. The process features selective RIE procedures, used to create a wide diameter opening in an upper silicon oxide layer, and a narrow diameter opening in a lower silicon oxide layer. Small area, silicon nitride islands, or shapes, a component of the composite insulator layer, are used as a stop layer, during the selective RIE procedures. The use of small area, silicon nitride shapes, offers less composite insulator capacitance, than counterparts fabricated using larger area, silicon nitride stop layers.

REFERENCES:
patent: 5612254 (1997-03-01), Mu et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5723387 (1998-03-01), Chen
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5753967 (1998-05-01), Lin
patent: 5935762 (1999-08-01), Dai et al.
patent: 5989997 (1999-11-01), Lin et al.
patent: 6001414 (1999-12-01), Huang et al.
patent: 6001733 (1999-12-01), Huang et al.
patent: 6025226 (2000-02-01), Gambino et al.
patent: 6027994 (2000-02-01), Huang et al.
patent: 6028362 (2000-02-01), Omura
patent: 6033977 (2000-03-01), Gutsche et al.

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