Method of fabricating crown capacitor by using oxynitride mask

Details Method of fabricating crown capacitor by using oxynitride mask Method of fabricating crown capacitor by using oxynitride mask

1998-10-07

2000-07-25

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438240, 438255, 438381, 438397, 438398, 438396, 438386, 438634, H01L 218242, H01L 218234, H01L 2120

Patent

active

060936010

ABSTRACT:
A method of fabricating a stack crown capacitor of a dynamic random access memory (DRAM) cell by using an oxynitride mask is disclosed. First, a dielectric layer and a silicon nitride layer are sequentially deposited over a substrate with an electrical device. Next, forming a contact in the silicon nitride layer and the dielectric layer, and depositing a first polysilicon layer to fill the contact. Next, depositing an oxide layer and an oxynitride layer sequentially, and then defining a bottom electrode pattern for etching the oxynitride layer and the oxide layer. Then, laterally etching the oxide layer, and depositing a second polysilicon layer. Next, etching the second polysilicon layer and the first polysilicon layer by using the oxynitride layer as a mask to form the bottom electrode. Next, removing the oxynitride layer, the oxide layer and partial silicon nitride layer. Finally, forming an interelectrode dielectric layer and a top electrode.

REFERENCES:
patent: 5849619 (1998-12-01), Cho et al.
patent: 5909621 (1999-06-01), Hsia
patent: 5966609 (1999-10-01), Kwon
patent: 5981336 (1999-11-01), Chern
patent: 5994181 (1999-11-01), Hsieh et al.

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