Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-08-01
2000-07-25
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438382, H01L 218242
Patent
active
060935960
ABSTRACT:
Disclosed are methods of forming resistors and diodes from semiconductive material, and static random access memory (SRAM) cells incorporating resistors, and to integrated circuitry incorporating resistors and diodes. A node to which electrical connection is to be made is provided. An electrically insulative layer is provided outwardly of the node. An opening is provided in the electrically insulative layer over the node. The opening is filled with semiconductive material which depending on configuration serves as one or both of a vertically elongated diode and resistor.
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"Silicon Processing for the VLSI Era, vol. 1--Process Technology", by S. Wolf and R. N. Tauber, Lattice Press, pp. 137-138 and 189-191, 1986.
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Manning Monte
Rolfson J. Brett
Micro)n Technology, Inc.
Rocchegiani Renzo
Smith Matthew
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