Method of prevention of degradation of low dielectric constant g

Details Method of prevention of degradation of low dielectric constant g Method of prevention of degradation of low dielectric constant g

1997-12-18

2000-03-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438790, H01L 21316

Patent

active

060431474

ABSTRACT:
Patterned metal layers are gap filled with HSQ and passivated to stabilize the dielectric constant of the HSQ substantially at the as-deposited value prior to oxide deposition by PECVD and planarization. Passivation and stabilization are effected by treating the as--deposited HSQ layer in a silane (SiH.sub.4) containing plasma.

REFERENCES:
patent: 5549934 (1996-08-01), Garza et al.
patent: 5750403 (1998-05-01), Inoue et al.
patent: 5818111 (1998-10-01), Jeng et al.
patent: 5888911 (1999-03-01), Ngo et al.

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