Method for manufacturing multiple stage ROM unit

Details Method for manufacturing multiple stage ROM unit Method for manufacturing multiple stage ROM unit

1998-03-31

2000-03-28

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438290, H01L 218246

Patent

active

06043127&

ABSTRACT:
A method of manufacture for a multiple stage ROM unit capable of coding the multiple stages with a single coding implantation and a method of manufacturing the same.
The ROM includes a semiconductor substrate covered by an insulating layer. A gate structure is provided above the insulating layer. A channel region is located on the substrate beneath the gate structure. Source/drain regions are disposed on the semiconductor substrate on each side of the channel region. A cap partially covers the top of the gate structure so as to divide the channel region therebelow into a first channel region and a second channel region such that multiple-level threshold voltages may be coded in the ROM.

REFERENCES:
patent: 5091329 (1992-02-01), Bekkering et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5378647 (1995-01-01), Hong
patent: 5668029 (1997-09-01), Huang et al.

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