Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-09
2000-03-28
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438595, H01L 218238, H01L 21336
Patent
active
060431164
ABSTRACT:
A method of fabricating a self-align-contact is provided. Two gates are formed on a semiconductor substrate. A first spacer is formed on the sidewalls of the two gates, and a source/drain region is formed between the two gates. A first dielectric layer and a second dielectric layer are formed on the semiconductor substrate. The second dielectric layer is patterned. A self-align-contact opening is formed between the two gates by removing the first dielectric layer and the first spacer using the second dielectric layer as a mask. A second spacer is formed on the exposed sidewalls of the gate. The method of forming the second spacer includes forming an insulating layer that is about 200-100 .ANG. thick and anisotropically etching the insulating layer. The width of the second spacer is narrower than the width of the first spacer. A conductor layer is formed in the self-align-contact opening.
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patent: 5683922 (1997-11-01), Jeng et al.
patent: 5728595 (1998-03-01), Fukase
patent: 5877081 (1999-03-01), Matsumoto et al.
patent: 5885895 (1999-03-01), Liu et al.
Bowers Charles
Nguyen Thanh
United Microelectronics Corp.
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