Method of making non-volatile semiconductor memory device with t

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438491, 438532, 438659, H01L 218247

Patent

active

059857200

ABSTRACT:
A flash memory has diffused layers extending in a column direction to form channel regions between each two of the diffused layers, field oxide films extending in a row direction to divide the channel regions into separate channels arranged in a matrix, a floating gate disposed for each channel as a split gate, and a strip control gates extending in the row direction and overlying each row of the split floating gate. Each of the floating gates has a lower layer having a lower impurity concentration and an upper layer having a higher impurity concentration. The lower impurity concentration of the lower layer prevents fluctuations in device characteristics while the higher concentration of the upper layer enhances etch rates in two etching process for forming the floating gates of a matrix.

REFERENCES:
patent: 4354309 (1982-10-01), Gardiner et al.
patent: 4394191 (1983-07-01), Wada et al.
patent: 4914046 (1990-04-01), Tobin et al.
patent: 5010028 (1991-04-01), Gill et al.
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5237196 (1993-08-01), Mikata et al.
patent: 5365098 (1994-11-01), Miyamoto et al.
patent: 5418741 (1995-05-01), Gill
patent: 5446298 (1995-08-01), Kajima

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making non-volatile semiconductor memory device with t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making non-volatile semiconductor memory device with t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making non-volatile semiconductor memory device with t will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1324078

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.