Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-03-13
1999-11-16
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438268, H01L 218249
Patent
active
059857080
ABSTRACT:
A semiconductor apparatus comprising a vertical type semiconductor device having a first conducting type semiconductor substrate, a drain layer formed on the surface of the semiconductor substrate, a drain electrode formed on the surface of the drain layer, a second conducting type base layer selectively formed on the surface of the semiconductor substrate opposite to the drain layer, a first conducting type source layer selectively formed on the surface of the second conducting type base layer, a source electrode formed on the first conducting type source layer and the second conducting type base layer, and a gate electrode formed in contact with the first conducting type source layer, the second conducting type base layer and the semiconductor substrate through a gate insulating film and a lateral semiconductor device having an insulating layer formed in a region of the surface of the semiconductor substrate different from the second conducting type base layer, and a polycrystalline semiconductor layer formed on the insulating layer and having a first conducting type region and a second conducting type region, wherein the first conducting type source layer of the vertical semiconductor device and the first conducting type region of the polycrystalline semiconductor layer are simultaneously formed.
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G.M. Dolny et al., "Polycrystalline-Silicon Thin-Film Transistor Technology for Low Cost, High-Power Integrated Circuits", IEEE IEDM Technical Digest, Apr. 1992, pp. 233-236.
Funaki Hideyuki
Kawaguchi Yusuke
Kurobe Atsusi
Matsudai Tomoko
Nakagawa Akio
Chaudhari Chandra
Kabushiki Kaisha Toshiba
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