Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-18
1999-07-20
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257408, 257501, 257336, H01L 2976, H01L 2994, H01L 31062, H01L 3113
Patent
active
059259167
ABSTRACT:
Integrated circuitry having adjacent electrically isolated field effect transistors is disclosed and which includes a bulk semiconductor substrate; an electrically insulative device isolation mass located on the substrate and positioned between opposing active area regions; a first pair of LDD diffusion regions associated with the active area and abutting against the electrically insulative device isolation mass; a pair of field effect transistors each being received within one active area; a second paid of LDD diffusion regions associated with the active area and abutting against each field effect transistor; and a pair of electrically conductive transistor source and drain diffusion regions which are respectively spaced from the insulative isolation mass and field effect transistor.
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Dennison Charles H.
Doan Trung Tri
Clark Sheila V.
Micro)n Technology, Inc.
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