Polishing method for thin gates dielectric in semiconductor proc

Details Polishing method for thin gates dielectric in semiconductor proc Polishing method for thin gates dielectric in semiconductor proc

1997-05-08

1999-11-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438588, 438692, 438225, H01L 218238

Patent

active

059857064

ABSTRACT:
A semiconductor process in which an initial gate dielectric layer is formed on an upper surface of a semiconductor substrate. The initial gate dielectric layer is polished with a chemical mechanical polish to produce a finished gate dielectric layer. A thickness of the finished gate dielectric layer is less than a thickness of the initial gate dielectric layer and the thickness of the preferred finished gate dielectric layer is in the range of approximately 25 to 60 angstroms. In one embodiment, the initial gate dielectric layer is formed by thermally oxidizing the semiconductor substrate in an oxygen bearing ambient maintained at a temperature in the range of approximately 600.degree. C. to 900.degree. C. In an alternative embodiment, the formation of the initial gate dielectric layer is achieved by depositing an oxide. In this embodiment, the deposited oxide is preferably fabricated by a chemical vapor deposition process using a TEOS source in a CVD reactor chamber maintained at a temperature in the range of approximately 300.degree. C. to 600.degree. C. and a pressure of less than approximately two torrs. In a presently preferred embodiment, the polishing includes depositing a slurry on a ceramic polishing pad and applying the gate dielectric to the polishing plate in the presence of the slurry while rotating the ceramic plate with respect to the semiconductor substrate. The slurry preferably comprises fumed silica suspended in a suspending solution. The suspending solution preferably comprises KOH or NH.sub.3 OH. In one embodiment, the polishing plate is comprised of aluminum oxide.

REFERENCES:
patent: 5663086 (1997-09-01), Rostoker et al.
patent: 5866458 (1999-02-01), Lee

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