Method for inserting a gaseous phase in a sealed cavity by ion i

Details Method for inserting a gaseous phase in a sealed cavity by ion i Method for inserting a gaseous phase in a sealed cavity by ion i

1997-11-20

1999-11-16

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 50, 438407, 438528, 257415, 257419, 257682, H01L 2982

Patent

active

059856882

ABSTRACT:
A method for inserting a gaseous phase in a sealed cavity including inserting ions in the sealed cavity by ion implantation carried out at an energy level sufficient for the inserted ions to reach the sealed cavity and to form a gas having a gas pressure which deforms a wall of the sealed cavity. The ion implantation is performed using hydrogen ions, or a rare gas ions, such as helium ions. The method may be implemented into a method for manufacturing a structure with a soft electrical contact, a capacitor, or a matrix of pressure sensors.

REFERENCES:
patent: 4680474 (1987-07-01), Turner et al.
patent: 4707312 (1987-11-01), Bajaj
patent: 4849050 (1989-07-01), Evans et al.
patent: 4853669 (1989-08-01), Guckel et al.
patent: 5242863 (1993-09-01), Xiang-Zheng et al.
patent: 5804086 (1998-09-01), Bruel

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