Optoelectronic transducer and production methods

Details Optoelectronic transducer and production methods Optoelectronic transducer and production methods

1998-01-26

1999-07-20

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

257 99, 257432, 257433, H01L 3300, H01L 310232, H01L 310203

Patent

active

059258985

ABSTRACT:
An optoelectronic transducer configuration has a radiation-emitting and/or receiving semiconductor component fastened to a carrier plate in such a way that its beam exit/entry face is directed towards the carrier plate. The carrier plate is composed of a material which is transparent to the radiation. A device for focusing the radiation is additionally disposed on the carrier plate. The optoelectronic transducer is distinguished in particular by low reflection losses and simple mounting. A multiplicity of such transducers can be fabricated as a unit and then separated.

REFERENCES:
patent: 5255333 (1993-10-01), Althaus et al.
patent: 5600741 (1997-02-01), Hauer et al.
"Infrared High-Power Light-Emitting Diodes Expected to Evolve to New Applications", Youichi Yasuda, IEEE Journal of Electronic Engineering, May 26, 1989, No. 270, Tokyo, Japan, pp. 52-54.
Japanese Patent Abstract No. 60153184 (Masataka), dated Dec. 17, 1985.

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