Semiconductor device having MOS transistor with nitrogen doping

Details Semiconductor device having MOS transistor with nitrogen doping Semiconductor device having MOS transistor with nitrogen doping

1995-06-07

1996-09-10

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257410, 257411, 257900, H01L 27088

Patent

active

055548717

ABSTRACT:
An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

REFERENCES:
patent: 5369297 (1994-11-01), Kusunoki et al.
"Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) . . . ", Kuroi et al, 1993 IEEE, pp. 325-328.

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