Methods and apparatus for a cleaning process in a high temperatu

Details Methods and apparatus for a cleaning process in a high temperatu Methods and apparatus for a cleaning process in a high temperatu

1997-08-22

1999-11-16

Breneman, Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 67, 438905, 156345, C23F 100

Patent

active

059839066

ABSTRACT:
The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

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