Method for improving step coverage of a metallization layer on a

Details Method for improving step coverage of a metallization layer on a Method for improving step coverage of a metallization layer on a

1990-09-05

1991-07-16

Beck, Shrive P.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

427 531, 427 97, 427123, 20419215, B05D 306, B05D 512, C23C 1434

Patent

active

050322338

ABSTRACT:
A method for improving step coverage of metallization layers of an aluminum alloy on an integrated circuit involves use of a deposited layer of a high melting point metal, such as tungsten or an alloy of tungsten and titanium, as an anti-reflective coating (ARC) to increase the efficient use of laser energy for planarization purposes where the underlying aluminum alloy covers a step, such as at an open via.

REFERENCES:
patent: 4335198 (1982-06-01), Hanada et al.
patent: 4388517 (1983-06-01), Schulte et al.
patent: 4431459 (1984-02-01), Teng
patent: 4674176 (1987-06-01), Tuckerman
patent: 4681795 (1987-07-01), Tuckerman
"Interconnects on Integrated Circuits Improved by Excimer Laser Planarization for Multilevel Metallization," by Mukai, et al., pp. 101-107, i.e., VLSI Multilevel Interconnection Conference, Santa Clara, CA (1988).
"The Use of Ti as an Antireflective Coating for the Laser Planarization of Al for VLSI Metallization" (Executive Summary), by Lai et al., VMIC Conference, 1989.

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