Method for producing a semiconductor device having a semiconduct

Details Method for producing a semiconductor device having a semiconduct Method for producing a semiconductor device having a semiconduct

1995-05-08

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438433, 438931, H01L 21336, H01L 2176

Patent

active

058044825

ABSTRACT:
A method for producing a semiconductor device, having a semiconductor layer of a SiC comprises the steps of a) supplying dopants to the surface of the SiC layer during heating thereof for diffusion of the dopants into the SiC layer, and b) highly doping at least a portion of the surface layer of the SiC layer prior to step a) to control diffusion of the dopants into the SiC layer under the surface layer portion.

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patent: 5286660 (1994-02-01), Chiou et al.
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patent: 5543637 (1996-08-01), Baliga
patent: 5654208 (1997-08-01), Harris et al.
Campbell et al., Electrical Properties of SiC Devices, in Mat. Res. Bull. vol. 4, pp. S 211-S 222, 1969, Pergamon Press Inc.
Vodakov et al., Diffusion and Solubility of Impurities in Silicon Carbide, 1973, Trans. III, Int. Conf., University of South Carolina Press.

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