Method for producing at least two transsistors in a semiconducto

Details Method for producing at least two transsistors in a semiconducto Method for producing at least two transsistors in a semiconducto

1996-07-18

1998-04-07

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438527, 438530, H01L 218234

Patent

active

057364451

ABSTRACT:
A method for producing at least two transistors in one semiconductor body includes placing a first well doping region for receiving a first transistor and a second well doping region serving as a charge carrier sink region for a second transistor into a semiconductor body by masked doping with ensuing heat treatment. A mask for forming the second well doping region includes regions being permeable to a dopant and regions being impermeable to the dopant.

REFERENCES:
patent: 4672738 (1987-06-01), Stengl et al.
patent: 4757031 (1988-07-01), Kuhnert et al.
patent: 5296393 (1994-03-01), Smayling et al.
patent: 5300454 (1994-04-01), Taft et al.
patent: 5426325 (1995-06-01), Chang et al.
"Variation of Lateral Doping--A New Concept to Avoid High Voltage Breakdown of Planar Junctions" (Stengl et al.), Siemens Research Laboratories.
IEEE Journal of Solid-State Circuits, vol. SC-21, No. 2, Apr. 1986, pp. 293-296, "An Enhanced Fully Scaled 1.2-.mu.m CMOS Process for Analog Applications" by Robert K. Reich et al.

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