Shallow junction formation by out-diffusion from a doped dielect

Details Shallow junction formation by out-diffusion from a doped dielect Shallow junction formation by out-diffusion from a doped dielect

1998-11-05

2000-11-21

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438199, 438301, 438655, H01L 2122, H01L 2138, H01L 218238

Patent

active

06150243&

ABSTRACT:
Self-aligned, ultra-shallow, heavily-doped source and drain regions of a MOS device are formed by implanting dopant containing ions in a dielectric layer formed on metal silicide layer portions on regions of a silicon-containing substrate where source and drain regions are to be formed in a silicon-containing substrate. Thermal treatment of the implanted dielectric layer results in out-diffusion of dopant through the metal silicide layer and into the region of the silicon-containing substrate immediately below the metal silicide layer portions, thereby forming heavily doped source and drain regions having an ultra-shallow junction spaced apart from the metal silicide/silicon substrate interface by a substantially uniform distance.

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