Laser diode with an improved multiple quantum well structure ado

Details Laser diode with an improved multiple quantum well structure ado Laser diode with an improved multiple quantum well structure ado

1998-01-02

2000-08-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

061119040

ABSTRACT:
The present invention provides another active layer structure provided in a light emission device for emitting a light with a predetermined wavelength. The active layer structure comprises a multiple quantum well structure and at least a second well layer. The multiple quantum well structure comprises alternating laminations of first well layers showing electroluminescence and potential barrier layers. The first well layers have a first set of energy band gaps which are uniform and corresponds to the predetermined wavelength, provided that energy band gap is defined as a difference between a ground level of electrons in conduction band and a ground level of holes in valence band. The second well layer is provided within any of the potential barer layers so that the second well layer is separated via the potential barrier layers from the first well layers. The second well layer has a second energy band gap in a range which is above the first set of energy band gaps and below a set of forbidden band widths of the potential barrier layers. The range of the second energy band gaps is defined so that the second well layer exhibits carrier accumulations and no electro-luminescence to thereby ensure that carriers accumulated in the second well layer are injected into the first well layers when the first well layers are deficient in carriers for the electro-luminescence.

REFERENCES:
patent: 5381023 (1995-01-01), Komatsu
patent: 5523256 (1996-06-01), Adachie et al.
The 41st Collection of Draft Papers of the Oubutsu Society 3a-K-9, p. 1035, Spring 1994. (No Month).

Affiliated with

Also associated with

Rating

Laser diode with an improved multiple quantum well structure ado does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser diode with an improved multiple quantum well structure ado, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser diode with an improved multiple quantum well structure ado will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1256414