Method for fabricating a crown capacitor with rough surface

Details Method for fabricating a crown capacitor with rough surface Method for fabricating a crown capacitor with rough surface

2000-01-26

2000-11-21

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, 438244, 438256, 438396, H01L 218242

Patent

active

061502073

ABSTRACT:
This invention is related to a method for fabricating a crown capacitor with a rough surface, which comprises the steps of: forming a conducting layer which contacts the semiconductor source diffusion region on the substrate; forming an insulating layer on the conducting layer to form a stacked layer comprising the insulating layer and the conducting layer; defining the stacked layer to form a residue portion of the stacked layer adjacent to the semiconductor diffusion region; forming a plurality of first conducting spacers adjacent to side-walls of the stacked layer; forming a plurality of second conducting spacers having a rough surface adjacent to the first conducting spacers; forming a plurality of third insulating spacers adjacent to the second conducting spacers with the rough surface; removing the insulating layer and the third insulating spacers to form a storage-node capacitor plate composed of the first conducting spacers, the second conducting spacers, and the conducting layer; forming a dielectric layer on the storage-node capacitor plate; and forming an upper plate on the dielectric layer.

REFERENCES:
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5597760 (1997-01-01), Hirota
patent: 5877052 (1999-03-01), Lin et al.
patent: 5897352 (1999-04-01), Lin et al.
patent: 5962886 (1999-10-01), Mori et al.
patent: 5994181 (1999-11-01), Hsieh et al.
patent: 5994197 (1999-11-01), Liao
patent: 5998824 (1999-12-01), Lee
patent: 6048763 (2000-04-01), Doan et al.

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