In-situ capped aluminum plug (CAP) process using selective CVD A

Details In-situ capped aluminum plug (CAP) process using selective CVD A In-situ capped aluminum plug (CAP) process using selective CVD A

1996-12-30

2000-08-29

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438680, 438653, 438656, H01L 21443

Patent

active

061108286

ABSTRACT:
The present invention generally provides a method of forming a structure having a selective CVD metal plug with a continuous barrier layer formed thereon. More particularly, the present invention applies a thin layer of warm PVD metal over a selective CVD metal plug and adjacent nodules on the dielectric field to planarize the metal surface. A barrier is then deposited over the planarized metal surface. Therefore, the invention provides the advantages of having (1) void-free, sub-half micron selective CVD metal via plugs and interconnects, and (2) a reduced number of process steps without the use of CMP, and (3) barrier layers over the metal plugs to improve the electromigration resistance of the metal.

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