Fishing – trapping – and vermin destroying
Patent
1990-11-05
1992-04-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437194, 437197, 437203, H01L 21283
Patent
active
051089513
ABSTRACT:
A method is provided for depositing aluminum thin film layers to form improved quality contacts in a semiconductor integrated circuit device. All or some of the deposition process occurs at relatively low deposition rates at a temperature which allows improved surface migration of the deposited aluminum atoms. Aluminum deposited under these conditions tends to fill contact vias without the formation of voids. The low temperature deposition step can be initiated by depositing aluminum while a wafer containing the integrated circuit device is being heated from cooler temperatures within the deposition chamber.
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C. Y. Ting:TiN Formed by Evaporation as a Diffusion Barrier Between Al and Si; J. Vac. Science Technology, vol. 21, No. 1, May/Jun. 1982.
Wolf et al.: Aluminum Thin Films and Physical Vapor Deposition in VLSI; Silicon Processing for the VLSI Era, Lattice Press, 1986, pp. 332-334 and 367-374.
Chen Fusen E.
Dixit Girish A.
Lin Yih-Shung
Liou Fu-Tai
Wei Che-Chia
Chaudhuri Olik
Graybill David E.
Hill Kenneth C.
Jorgenson Lisa K.
Robinson Richard K.
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